MOS Transistors: Principles and Modeling
Master the fundamentals of MOS transistor operation and modeling, essential for device modeling and high-performance circuit design.
Master the fundamentals of MOS transistor operation and modeling, essential for device modeling and high-performance circuit design.
This comprehensive course explores the principles and modeling of MOS transistors, providing essential knowledge for both device modelers and circuit designers. Led by Professor Yannis Tsividis, the course covers fundamental concepts from semiconductor physics to advanced modeling techniques. Students learn about device operation, small-dimension effects, dynamic behavior, and practical modeling approaches for circuit simulation. The curriculum emphasizes both theoretical understanding and practical applications in modern semiconductor technology.
4.6
(146 ratings)
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Instructors:
English
English (Original), Deutsch (Auto), हिन्दी (ऑटो), 19 more
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What you'll learn
Understand fundamental MOS transistor operation principles
Master long-channel and short-channel device physics
Analyze dynamic behavior and transient response
Develop small-signal models for various frequency ranges
Evaluate noise characteristics and statistical variations
Apply modeling techniques for circuit simulation
Skills you'll gain
This course includes:
902 Minutes PreRecorded video
6 quizzes
Access on Mobile, Tablet, Desktop
FullTime access
Shareable certificate
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There are 12 modules in this course
This course provides a thorough examination of MOS transistor operation and modeling techniques. Starting with semiconductor basics and CMOS processes, it progresses through detailed analysis of device physics, operation modes, and modeling approaches. The curriculum covers essential topics including long-channel and short-channel effects, dynamic operation, small-signal modeling, and advanced phenomena such as quantum effects and statistical variability. Special emphasis is placed on practical modeling techniques for circuit simulation.
About This Course and Overview of the MOS Transistor
Module 1 · 37 Minutes to complete
Preliminaries and Background
Module 2 · 1 Hours to complete
The Two-Terminal and Three-Terminal MOS Structures
Module 3 · 2 Hours to complete
The Long-Channel MOS Transistor – Part 1
Module 4 · 53 Minutes to complete
The Long-Channel MOS Transistor – Part 2
Module 5 · 1 Hours to complete
Small-Dimension Effects 1
Module 6 · 2 Hours to complete
Small-Dimension Effects 2; Modeling for Circuits Simulation
Module 7 · 1 Hours to complete
Large-Signal Dynamic Operation
Module 8 · 1 Hours to complete
Small-Signal Modeling I
Module 9 · 1 Hours to complete
Small-Signal Modeling II
Module 10 · 1 Hours to complete
Final Exam
Module 11 · 30 Minutes to complete
End of Course
Module 12 · 1 Hours to complete
Fee Structure
Payment options
Financial Aid
Instructor
Charles Batchelor Professor of Electrical Engineering
Yannis Tsividis is Edwin Howard Armstrong Professor of Electrical Engineering at the Fu Foundation School of Engineering and Applied Science at Columbia University.
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4.6 course rating
146 ratings
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